Soitec in European funding programs
Since the 2010s, European funding programs have evolved from Horizon 2020 to CHIPS JU through IPCEI contracts. These programs support innovation projects and cover all Technology Readiness Levels (TRL) up to industrial deployment. Soitec mainly addresses CHIPS JU calls and is a direct partner of IPCEI.
Key Benefits of Participation :
Encourages collaboration and partnerships
Requires forming Consortiums with partners across the value chain
Accelerates innovation and industry responsiveness
Strengthens European semiconductor ecosystems
Increases European competitiveness in the global market
Soitec plays a key role in three strategic Work Streams within the “Think, Act, Communicate” framework, and leads the Communicate Work Stream.
Move2THz builds a fully integrated European value chain providing commercially attractive, ecology-friendly, mass-market technologies suitable for sub-THz frequency operation and beyond, enabling emerging applications like mobile/data connectivity, imaging and sensing. To achieve this, Move2THz innovates the manufacturing process by establishing a breakthrough InP-on-silicon (InPoSi) global standard. It will secure its supply of semiconductors in a sustainable way for the next generations of wireless applications, generate a wealth of new market opportunities, and make significant contributions to a highly qualified European workforce. Soitec activities are focused on the development of InPoSi substrates by using the SmartCut process and applying it to high quality bulk InP substrates. This aim is directly linked to the COMMUNICATE Workstream of the IPCEI ME/CT Program.
The STARLight project aims to reinforce the European photonics ecosystem and accelerate its industrial roll-out, targeting aggregated data rates beyond 800 Gbps. Soitec contributes by supplying advanced engineered substrates, essential to the development of 300mm PIC100 and PIC200 photonic integration technologies. These activities are closely aligned with the COMMUNICATE Work Stream of the IPCEI ME/CT Program.
The SOIL project will accelerate the implementation of semiconductor manufacturing based on FD-SOI technology, building, and securing the European semiconductor value chain from material to system, supporting the twin green and digital transition. It will give Europe the opportunity to move forward with industrial and academic players spanning the value chain by joining in the risk-taking necessary for the growth dynamics of semiconductors for Automotive, Space, IoT and Edge AI domain in Europe. In this project, Soitec is developing FD-SOI substrates for 18nm nodes and simulating the performance gain attached to each substrate generation. These activities are directly linked to the THINK Workstream of the IPCEI ME/CT Program.
FASTLANE targets a complete, highly competitive, and sustainable European value chain for Silicon Carbide (SiC) based power electronics. The goal is to provide cutting-edge technology from engineered SiC substrates to innovative, novel devices, smart power modules and converters/inverters for a wide range of automotive and industrial applications. Soitec is contributing to this project to develop the SmartSiC Gen2 substrate in 150 & 200mm diameter. These activities are directly linked to the ACT Workstream of the IPCEI ME/CT Program.
Hipower5.0 aims to develop highly integrated eDrive components using leading edge Wide Bandgap semiconductors and power electronics integration technology. Soitec will contribute to the project with its new engineering substrate combining GaN and Poly-SiC (pSiC) materials: the SmartGaN substrate designed for lateral HEMT up to 1200V. These activities are directly linked to the ACT Workstream of the IPCEI ME/CT Program.
NeAIxt aims to enable innovation and demonstration in volume for AI applications in main end markets (Education, Industry, Safety, Healthcare and Mobility) while focusing on AI Enablers, eNVM Evolution, MCU Innovation and In-Memory Computing. Soitec will contribute to the project by paving the way for a third generation of substrate addressing more advanced FD-SOI technology nodes beyond 18 nm. These activities are directly linked to the THINK Workstream of the IPCEI ME/CT Program.
The project offered the first European industrial roadmaps for adding connectivity and functionality features on existing CMOS technology. It brought together significant European actors from the entire value chain, from materials and semiconductor technologies to the systems, to build a complete European supply chain for RF electronics, enabling new RF domains for sensing, communication, 5G radio infrastructure and beyond. Ultimately, the project allowed a high-scale integration for reduced consumption of power and costs, leading to the production of reliable and environmentally friendly components.


