RF-GaN substrates
Enhancing RF Power Amplifier efficiency and linearity for superior wireless performance
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RF-GaN technology drives innovation of power amplifiers for 5G markets
Our RF-GaN increases the high-frequency system efficiency and power density of next generation sub 6GHz and mmWave-band cellular 5G infrastructures and mobile devices. GaN beats GaAs or Si-technologies when it comes to higher system efficiencies, power density, linearity, size reductions and lower current consumption.
Low-voltage GaN technology can even address today's sub 6 and mmW band power devices in 5G smartphones. Soitec's RF-GaN product family consists of state-of-the-art (In,AI)N/GaN and (AI,Ga)N/GaN hetero epitaxial layer structures deposited crack-free on up to 200mm (111) high-resistance Si or 150mm semi-insulating SiC substrate for RF applications.
We offer optimized layer structures addressing sub6 and mmW 5G bands. Our proprietary high-voltage buffer is Fe-free and delivers high breakdown voltage, low trapping effects and RF losses and a consistently low wafer bow.
How RF-GaN will impact your products
High Power Density
RF GaN epiwafers provide higher power density compared to traditional semiconductor materials like silicon, enabling more powerful and efficient RF amplifiers in compact designs.
Wide Bandgap
GaN's wide bandgap allows for operation at higher voltages and temperatures, improving device performance and reliability under extreme conditions.
High Efficiency
GaN devices offer greater energy efficiency, reducing power consumption and heat generation, which is crucial for maintaining the performance of 6G handsets.
High Frequency Operation
GaN's material properties support operation at higher frequencies, making it ideal for millimeter-wave (mmWave) technologies required in 6G networks or radar applications in Ka and Ku bands.
Thermal Conductivity
GaN epiwafers have better thermal conductivity compared to silicon, aiding in better heat dissipation, which is essential for maintaining device longevity and performance.
Faster Switching Speeds
GaN transistors can switch faster than silicon-based transistors, leading to quicker signal processing and improved overall system performance in RF applications.
Where RF-GaN technology is being used
RF-GaN enhances base station performance with superior efficiency, higher power density and greater reliability enabling faster and more reliable connections.
RF-GaN technology boosts power efficiency, reduces heat, enhances signal clarity, delivers superior performance and extended battery life for wireless handsets.
RF-GaN's ability to operate at higher frequencies makes it ideal for the Ka-band and other high-frequency bands used in modern satellite communications, improving data transmission rates and signal clarity. Its high power density allows for more powerful transmitters in a smaller package, which is vital for space-constrained satellite designs.
RF-GaN operates reliably under extreme temperatures and high radiation environments, making it ideal for military and aerospace applications. Its ability to switch rapidly improves the speed and responsiveness of defense systems, such as missile defense and electronic countermeasures.
RF-GaN supports operation across a broad frequency spectrum, making it ideal for diverse industrial RF applications, from heating to plasma generation. Moreover, its excellent thermal conductivity enhances heat dissipation, leading to longer device lifespan and reliability. Finally, GaN devices are highly durable and can withstand harsh industrial environments, ensuring consistent performance under demanding conditions.
Frequently asked questions
Gallium Nitride (GaN) is a semiconductor material used in RF (Radio Frequency) applications for its superior power efficiency, high-frequency performance, and thermal conductivity.
GaN offers higher power density, greater efficiency, and better thermal performance compared to silicon, making it ideal for high-frequency, high-power RF applications.
GaN is used in 5G base stations, satellite communications, radar systems, broadband wireless networks, and wireless handsets, among other applications.
GaN enables higher power output and efficiency, supporting the high-frequency, high-bandwidth needs of 5G networks, resulting in more reliable and faster connectivity.
GaN enhances satellite transceivers with better signal strength, higher efficiency, and improved data transmission, essential for reliable space communication.
GaN improves radar performance by providing higher power output, greater bandwidth, and better range and resolution, critical for military, weather, and automotive radar systems.
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