Enable the next generation of safe, energy-efficient, and intelligent automotive solutions, driving performance and reliability in electric and autonomous vehicles, thanks to Soitec engineered substrates
Soitec empowers electric and autonomous vehicle innovation. Our industry-leading engineered substrates enable the development of advanced automotive applications, delivering superior energy efficiency, performance, robustness, integration, sustainability, faster time-to-market and intelligence.
Soitec’s Power-SOI facilitates next-generation smart power IC development, offering enhanced integration, safety, energy efficiency, and compactness. It meets higher functional safety (FuSa) standards and new 48V low-voltage architecture requirements.
Soitec's SmartSiC™ enhances device conductivity and performance while improving manufacturing yields. It reduces the environmental impact of automotive power management applications.
Soitec’s Power-GaN technology enhances efficiency and robustness in next-generation power management systems, outperforming traditional Si technologies. It offers superior efficiency, higher power density, and reduced system size, making it ideal for high-performance power management applications.
Soitec's Power-SOI enhances automotive gate drivers with better integration, safety, efficiency, and robustness. Its negative transient immunity enables higher switching in WBG devices, reducing size and boosting efficiency.
Soitec's SmartSiC™ and Power-GaN support WBG development used in motor drive applications, offering higher efficiency, power density, and compact design.
Soitec's Power-SOI enhances automotive gate drivers with better integration, safety, efficiency, and robustness. Its negative transient immunity enables higher switching in WBG devices, reducing size and boosting efficiency.
Soitec's SmartSiC™ and Power-GaN support WBG development used in motor drive applications, offering higher efficiency, power density, and compact design.
Soitec's Power-SOI enables BMIC development for up to 30 cells in series, offering higher integration, FuSa, measurement accuracy, and robustness.
Soitec's Power-SOI enhances power controller IC, gate drivers and IVN with better integration, safety, efficiency, and robustness. Its negative transient immunity enables higher switching in WBG devices, reducing size and boosting efficiency.
Soitec's SmartSiC™ and Power-GaN support WBG development used in these applications, offering higher efficiency, power density, and compact design.
Soitec substrates drive vehicle electrification, enhancing efficiency, safety, integration, and robustness in BMS, OBC, DCDC, SBC, and other critical systems.
Soitec substrates elevate traction inverters, delivering unparalleled performance, energy efficiency, safety, and reliability for gate driver, SiC MOSFET/ diodes applications.
Soitec products advance ADAS development, offering superior integration, compactness, energy efficiency, safety, and robustness for next-generation ADAS systems. It is widely adopted for radar SoC, IVN, SBC, PMIC etc.
Soitec drives software-defined vehicle innovation with substrates that maximize integration, efficiency, and reliability while enhancing safety and performance. Some applications are zonal controller unit (ZCU), SBC, IVN etc.
Soitec substrates enhance automotive infotainment, delivering faster data transmission, superior durability, compactness, integration, and performance. It is widely used for MCU, IVN, Class D amplifier etc.
Soitec's Power-SOI enables next-gen smart power ICs for 48V architecture and higher functional safety (FuSa). Embedded in industry-leading system basis chip (SBC), smart actuator and others.
Soitec's FD-SOI offers unmatched performance: ultra-low power, superior SER, robustness, and integration. Embedded in leading radar SoC, zonal controller unit (ZCU) etc.
Soitec’s Power-SOI enables next generation BMIC supporting up to 30 cells in series battery monitoring. Preferred BMIC in next generation of cell-to-pack (CTP) and cell-to-chassis (CTC).
Soitec's SmartSiC™ reduces material carbon footprint by up to 80% and increases current density by up to 30%. Preferred MOSFET in traction inverters, OBC etc.
CEA-Leti Innovation Days 2025
IMS 2025
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