POI ENGINEERED SUBSTRATES FOR RF FRONT END MODULE FILTERS

Addressing 5G filtering challenges

Soitec Piezoelectric-on-Insulator (POI) engineered substrates allow the manufacturing of high performance surface acoustic wave (SAW) filter components in response to the requirements demanded by the 4G and the 5G New Radio (NR) bands.

Soitec POI substrates

Soitec POI engineered substrates enable the design of filters with high quality factor, large bandwidth, very low temperature sensitivity and low insertion loss with a simple device manufacturing technology. They also provide the capability to integrate multiple filters on the same die and address high frequencies requirements.

POI substrates composition

The POI substrate is made of three layers: a piezoelectric material, a buried oxide and a silicon layer.

The buried oxide selects and guides only high velocity waves, allowing for low loss and very high signal selectivity. It also keeps the piezo material constrained against temperature variations, ensuring outstanding frequency stability when temperature changes.

Specification:

Available in 150mm wafer

Piezo material: Lithium Tantalate (LiTaO3)

Piezo layer thickness: 300nm-1um