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CONNECT RF-SOI


SMARTPHONE FRONT-END MODULES


Our Radiofrequency Silicon-on-Insulator (RF-SOI) substrate technology allows to equip smartphones and other wireless devices with high quality front-end modules that excel with outstanding performance and enable fast and reliable 5G and Wi-Fi connectivity.

Our Connect RF-SOI substrate product line brings outstanding performance to radiofrequency (RF) front-end modules that allow for fast and reliable data transmissions in legacy 4G LTE and new 5G sub-6 GHz/ mmWave smartphones.

Schéma RD SOI desktop 1 Schéma RD SOI desktop 1
GROWING MARKETS DEMAND FASTER DATA TRANSMISSION

Over the years, we have moved from simple text messages to live video transmission over our smartphones.

5G disrupts the wireless ecosystem by connecting users to a new world of mobile and nomad smart connected things creating new user experiences fueled by unprecedented mobile network capacity with on-demand data throughputs at record lowest latencies.

RF SOI

FRONT-END MODULES IN SMARTPHONES

Carrying your data at very high frequency

Smartphones are integrating very diverse functions including radio emission and reception, digital processing, memory, audio, battery management, camera and display.
The front-end module enables RF signal transmission and reception between a cellular phone and a base station.

Schéma courbe RF desktop Schéma courbe RF desktop

INCREASING COMPLEXITY

Each generation requires more devices and higher performance in the front-end module.
Because RF-SOI can bring better linearity and insertion loss at the best cost/performance trade-off, it enables higher data speeds, longer battery life and fewer dropped calls.

100% of smartphones based on Soitec RF-SOI technology
100%
of smartphones based on Soitec RF-SOI technology

CONNECT RF-SOI PRODUCTS

Our RF-SOI products have become a standard of the industry.

They are produced in high-volume manufacturing to manufacture ICs for RF front-end modules while matching chip makers’ cost and performance requirements.

Our substrates enable high RF performance on silicon films compatible with standard CMOS processes, high linearity RF isolation and power signals, low RF loss, digital processing and power management integration.

Our product roadmap addresses the full spectrum of different performance requirements.

Rfesoien
Connect RFeSI™

For devices with stringent linearity specifications.

RFeSI™ is our mainstream product line and typically targets LTE-Advanced and 5G specifications and addresses different performance requirements.

A Trap Rich layer is added below the buried oxide to provide outstanding RF performances.

Ifemen
Connect iFEM-SOI

For cost sensitive highly integrated devices.

Our iFEM-SOI substrate is particularly well suited to Wi-Fi, IoT and other consumer applications specifications.

A simplified Trap Rich layer allows for a trade-off between performances and RFIC total cost of ownership.

H Rsoien
Connect HR-SOI

For devices with lower linearity specifications.

HR-SOI products typically target 2G and 3G specifications.