RF Performance
FD-SOI provides higher cut-off frequency than Bulk and Finfet technologies.
FD-SOI substrates make the world of mobile and communication...
With Moore's law slowing down, FD-SOI engineered substrates can bring differentiating solutions that exceed megatrends requirement.
The application level advantages of FD-SOI are:
Energy Efficiency
FD-SOI outperforms Bulk and Finfet technologies in terms of energy efficiency at a given technology node.
Analog Performance
FD-SOI exhibits excellent transistors matching, Speed increase in all analog blocks, higher gain with same current density, lower noise variability.
+30%
higher cut off frequency
10x
better energy efficiency
+30%
better transistor matching
FD-SOI substrate relies on two primary innovations:
- Firstly, an ultra-thin layer of insulator, called the buried oxide, is positioned on top of the base silicon.
- Secondly, a ultra-thin top silicon layer is used to form the transistor channel.
The ultra-thin film FD-SOI architecture enables transistors to operate in fully depleted mode, offering an “electrical Shrink-on-Chip” solution while simplifying the manufacturing process.
Soitec FD-SOI wafers characteristics are:
- 12nm to 15nm top silicon layer
- 15 to 25nm BOX layer
- 300 mm wafer
- Atomistic uniformity and roughness
- Low defectivity
FD-SOI technology provides the optimal balance between digital performance, mixed-signal compatibility, power consumption and cost.
Soitec produces FD-SOI wafers for technology nodes from 65nm down to 12nm, enabling ultra-low-power features, unique cost/performance tradeoff, high-reliability and high-performance-mixed signal integration for a wide range of applications.