Adobe Stock 379559119 1

Connect FD-SOI





Connect, Communicate and Create

FD-SOI substrates make the world of mobile and communication...
Last connect fdsoi EN Last connect fdsoi EN

With Moore's law slowing down, FD-SOI engineered substrates can bring differentiating solutions that exceed megatrends requirement.

Final connect FDSOI Final connect FDSOI

The application level advantages of FD-SOI are:

Webp net resizeimage 49
RF Performance

FD-SOI provides higher cut-off frequency than Bulk and Finfet technologies.

Sans titre 1
Energy Efficiency

FD-SOI outperforms Bulk and Finfet technologies in terms of energy efficiency at a given technology node.

Noun 392474 bis
Analog Performance

FD-SOI exhibits excellent transistors matching, Speed increase in all analog blocks, higher gain with same current density, lower noise variability.

+30%
higher cut off frequency
10x
better energy efficiency
+30%
better transistor matching
SMART FDSOI EN

FD-SOI substrate relies on two primary innovations:

  • Firstly, an ultra-thin layer of insulator, called the buried oxide, is positioned on top of the base silicon.
  • Secondly, a ultra-thin top silicon layer is used to form the transistor channel.

The ultra-thin film FD-SOI architecture enables transistors to operate in fully depleted mode, offering an “electrical Shrink-on-Chip” solution while simplifying the manufacturing process.

Soitec FD-SOI wafers characteristics are:

  • 12nm to 15nm top silicon layer
  • 15 to 25nm BOX layer
  • 300 mm wafer
  • Atomistic uniformity and roughness
  • Low defectivity

FD-SOI technology provides the optimal balance between digital performance, mixed-signal compatibility, power consumption and cost.

Soitec produces FD-SOI wafers for technology nodes from 65nm down to 12nm, enabling ultra-low-power features, unique cost/performance tradeoff, high-reliability and high-performance-mixed signal integration for a wide range of applications.