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Connect FD-SOI

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FD-SOI substrates make the world of mobile and communication...

With Moore's law slowing down, FD-SOI engineered substrates can bring differentiating solutions that exceed megatrends requirement.

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The application level advantages of FD-SOI are:

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RF Performance

FD-SOI provides higher cut-off frequency than Bulk and Finfet technologies.

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Energy Efficiency

FD-SOI outperforms Bulk and Finfet technologies in terms of energy efficiency at a given technology node.

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Analog Performance

FD-SOI exhibits excellent transistors matching, Speed increase in all analog blocks, higher gain with same current density, lower noise variability.

higher cut off frequency
better energy efficiency
better transistor matching

FD-SOI substrate relies on two primary innovations:

  • Firstly, an ultra-thin layer of insulator, called the buried oxide, is positioned on top of the base silicon.
  • Secondly, a ultra-thin top silicon layer is used to form the transistor channel.

The ultra-thin film FD-SOI architecture enables transistors to operate in fully depleted mode, offering an “electrical Shrink-on-Chip” solution while simplifying the manufacturing process.

Soitec FD-SOI wafers characteristics are:

  • 12nm to 15nm top silicon layer
  • 15 to 25nm BOX layer
  • 300 mm wafer
  • Atomistic uniformity and roughness
  • Low defectivity

FD-SOI technology provides the optimal balance between digital performance, mixed-signal compatibility, power consumption and cost.

Soitec produces FD-SOI wafers for technology nodes from 65nm down to 12nm, enabling ultra-low-power features, unique cost/performance tradeoff, high-reliability and high-performance-mixed signal integration for a wide range of applications.