Soitec’s RFeSI-SOI wafers incorporate an innovative material (a trap-rich layer) between the high-resistivity handle wafer and the buried oxide (BOx), which significantly improves the RF performance of the finished ICs manufactured on these wafers.
Soitec RFeSI-SOI wafers bring added performance compared to HR-SOI:
- Better linearity
- Lower RF losses
- Lower crosstalk
- Improved quality factors for passives
- Smaller die size
- Higher thermal conductivity
On RFeSI products, Soitec measures the harmonic quality factor (HQF), a parameter that correlates with the second harmonic attenuation (HD2) of a coplanar waveguide.
This helps to ensure the substrate’s RF performance.
Soitec offers a range of RFeSI products to match your need.
Today we have released RFeSI80 and RFeSI90 products.
Typical Soitec RFeSI wafers include:
- Compatibility with LTE and LTE Advanced specifications
- 50nm to 200nm top silicon layer produced using Soitec’ Smart Cut technology
- Soitec’s Trap-rich layer
- Base wafer resistivity over 3 KOhm.cm
- 200mm and 300mm wafers
- HQF below -80dBm