Connect RFeSI™ SOI

Soitec RF enhanced Signal Integrity substrates for LTE and LTE-Advanced front-end module ICs.
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Soitec’s RFeSI™ wafers incorporate an innovative material (a trap-rich layer) between the high-resistivity handle wafer and the buried oxide (BOX), which significantly improves the RF performance of the finished ICs manufactured on these wafers.

Soitec RFeSI™ SOI wafers bring added performance compared to HR-SOI:

  • Better linearity
  • Lower RF losses
  • Lower crosstalk
  • Improved quality factors for passives
  • Smaller die size
  • Higher thermal conductivity

SEE SOITEC WHITE PAPER ON RF-SOI SUBSTRATES

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On RFeSI™ products, Soitec measures the harmonic quality factor (HQF), a parameter that correlates with the second harmonic attenuation (HD2) of a coplanar waveguide.

This helps to ensure the substrate’s RF performance.

SEE SOITEC WHITE PAPER ON RF-SOI WAFER CHARACTERIZATION

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Soitec offers a range of RFeSI™ products to match your need.
Today we have released RFeSI80 and RFeSI90 products.

Typical Soitec RFeSI™ wafers include:

  • Compatibility with 4G-LTE/5G and Wi-Fi specifications

  • Broad range of top silicon layer thicknesses produced using Soitec’s Smart Cut™ technology

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