Power-SOI substrates
Enabling robust, energy-efficient, and highly integrated automotive and industrial applications with advanced intelligence and meeting high FuSa requirements.
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Enabling the development of advanced smart automotive and industrial power applications
Power-SOI Features & Benefits
High voltage & low voltage integration on the same die
Power-SOI with DTI (deep trench isolation) enables integration of high and low voltage blocks on a single die, minimizing die area.
High temperature operation
Power-SOI's superior low leakage at high temperatures enhances temperature margins, facilitates AEC-Q100C Grade 0 certification, and improves device accuracy.
High robustness
Power-SOI's excellent noise immunity, latch-up-free structure, and enhanced ESD/EMI/EMC properties enable high-performance power ICs that meet stringent robustness requirements.
Simple device design
Power-SOI simplifies device design, reducing mask count and eliminating complex well structures. It also improves BV-Rsp performance through double RESURF
High Efficiency
Power-SOI technology often enables devices to work with higher efficiency by offering the lower on resistance (RDSon) and lower reverse recovery charge (Qrr). This benefit is crucial for energy-sensitive applications, particularly in automotive and mobile devices, contributing to longer battery life and energy-efficient performance.
Scalability for Future Nodes
Power-SOI is highly scalable for future technology nodes, making it adaptable to evolving needs in semiconductor manufacturing. This scalability ensures that Power-SOI will remain relevant in future generations of ICs, allowing for integration of new functionalities without increasing die size or complexity.
Connecting the world with Soitec Power-SOI substrates
Soitec’s Power-SOI substrates enable smart power management in electric vehicles (EVs) and advanced driver-assistance systems (ADAS), meeting high functional safety standards and supporting 48V low-voltage architectures for better efficiency. Their robustness and high-temperature tolerance make them ideal for powertrain and under-hood components.
In industrial applications, Power-SOI substrates offer durability, noise immunity, and energy efficiency, simplifying power IC design by integrating high- and low-voltage components. They are essential for reliable operation in harsh environments, particularly in motor drives, inverters, and automation systems.
Power-SOI substrates enhance energy efficiency and performance in datacenters and network infrastructure by supporting efficient power supply circuits and high-speed signal processing. Their ability to operate in high-temperature environments ensures reliable performance in demanding computing and telecommunication systems.
Highlights
Efficient smart power IC
Safer smart power IC
Better performance smart power IC
Increased Voltage Handling Capacity
Frequently asked questions
- IVN (In-vehicle Networking) such as CAN, LIN, FlexiRay, Ethernet Phy ICs
- PMIC (Power Management IC)/ SBC (System Basis Chip)
- BMIC (Battery monitoring IC)/ BMS AFE (Battery management system analog front end)
- Gate driver IC
- Smart actuator/ smart motor controller IC
- Industrial interface IC
- HiRel (High Reliability) IC etc.
- To enable high integration of high voltage circuits and low voltage circuits on the same die for saving die area
- To provide high robustness and reliability for meeting higher functional safety (FuSa) requirements
- To ease the IC design with increasing demands of wider operating temperature and higher FuSa requirements
- To shorten the IC development time by ensuring higher percentage of first time right design which improves the time-to-market
- To improve the efficiency of the power IC by reducing the conduction losses and switching losses
- The new 48V low voltage architecture: Power-SOI enables higher breakdown voltage (BV) which is needed for this architecture (said 200V BV)
- Increasing demands for higher functional safety (FuSa): Power-SOI enables the integration of high voltage circuits and low voltage circuits by providing excellent noise immunity with DTI & BOX, latch-up free structure and significant reduction of isolation area
- Package downsizing: Power-SOI low leakage current at higher junction temperature and much smaller die size allow the use of smaller package size
200mm Power SOI
- Smart Power 1.5: SmartCut ™ SOI EPI ready only up to 1.5um SOI thickness with BOX up to 3.0um
- Smart Power 2.0: SmartCut ™ SOI + EPI (up to 10 um) with BOX up to 3.0um
- Smart Power 2.1: SmartCut ™ SOI + EPI (up to 10um) with 3.1um to 3.9um BOX
300mm Power SOI
- Smart Power 3.0: SmartCut ™ SOI EPI ready only up to 0.2um SOI thickness with BOX up to 2um
- Smart Power 3.1: SmartCut ™ SOI + EPI (up to 7um) with BOX up to 2um
Related Events
SEMICON West 2025
ECOC 2025
ICSCRM 2025
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