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Auto Power-SOI


VEHICLE AND INDUSTRY POWER

Our Silicon-on-Insulator (SOI) technology drives the energy-efficiency, reliability and sustainability of automotive and industrial applications and solutions.

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Our Auto Power-SOI product line addresses the requirements for integrating high- and low-voltage functions in intelligent and sustainable power IC devices for automotive and industrial markets.

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TOWARDS A MORE SUSTAINABLE WORLD

Power SOI has proven its benefits over the last decade for power management applications and is a key contributor to support the electrification of things.

Main advantages are

  • Enable integration of low voltage and high voltage blocks on the same wafer

  • High noise immunity and system-level robustness

  • Enable design of low Rds transistor which improve the global power efficiency

  • High temperature resilience which ease the design of high performance ICs (AEC-Q100 grade 0)

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SMART POWER TECHNOLOGY

A fully integrated solution

Smart power technology enables single chip integration of the power conversion stages, security features (temperature or overload control), remote control and other analog and digital functions.
Benefits include die size reduction, reliability and lower cost at system level.

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AUTO POWER SOI FOR SMART POWER

Our Power-SOI products provide excellent electrical isolation and are perfect for integrating devices operating at different voltages (from a few volts to several hundred volts) while reducing die area and improving reliability.

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Typical Power-SOI is defined by:

1µm BOX with 1.5µm Top Silicon layer

Application examples

  • In vehicle networking (IVN)

  • Power management IC (PMIC)

  • System basis chip (SBC)

  • Battery management systems (BMS)

  • Smart motor controller/ actuator

  • Industrial sensors & ultrasound pulser IC

  • Gate driver IC, Class D amplifier

  • LED driver IC

Markets

  • Automotive
  • Industrial
  • Medical

Specifications

  • Available in 200mm and 300mm wafer sizes
  • Top silicon layer: 0.1µm ~ 20µm
  • Box thickness: 0.1µm ~ 3.0µm