Over the years, we have moved from simple text messages to emails, pictures, data and now live video transmission over our smartphones thanks to increased data speeds and improved battery life.
The front-end module in your phone plays a key role in reaching these performance levels.
Smartphones are integrating very diverse functions including radio emission and reception, digital processing, memory, audio, battery management, camera and display.
The front-end module enables RF signal transmission and reception between a cellular phone and a base station.
Each generation requires more devices and higher performance in the front-end module.
Because RF-SOI can bring better linearity and insertion loss at the best cost/performance trade-off, it enables higher data speeds, longer battery life and fewer dropped calls.
Our RF-SOI products have become a standard of the industry.
They are produced in high-volume manufacturing to manufacture ICs for RF front-end modules while matching chip makers’ cost and performance requirements.
Our substrates enable high RF performance on silicon films compatible with standard CMOS processes, high linearity RF isolation and power signals, low RF loss, digital processing and power management integration.
Our product roadmap addresses the full spectrum of different performance requirements.
For devices with high linearity requirements.
RFeSI is our mainstream product line and typically targets LTE and LTE-Advanced specifications.
A trap-rich layer is added below the buried oxide to provide high RF performance.
RFeSI range of products addresses different performance requirements.
For devices with lower linearity requirements.
HR-SOI products typically target 2G and 3G specifications.
For devices with ultra-high linearity requirement.
The top layers of a CMOS processed wafer is transferred onto an high-performance RF substrate.
Compatible with a wide range of substrates including glass, pAlN, fused silica, and more.