For the past decades, silicon- and gallium arsenide-based technologies have paved the way for many electronic innovations in RF wireless and power switching converter systems. However, improvements are nowadays only happening in incremental steps as incumbent semiconductor technologies are approaching their physical limits.
As a wideband gap material, GaN offers higher efficiency and power density than conventional semiconductors at device level. At system level, those benefits translate into size reduction, lower power consumption and lower cost.
Our GaN epitaxial wafers are complex (Al,In,Ga)N multi-layer structures grown through epitaxy by metal organic chemical vapor deposition (MOCVD) either on silicon or silicon carbide (SiC) substrates. The resulting GaN/Si and GaN/SiC epitaxial wafers are used to manufacture electronic devices demonstrating superior performance vs incumbent technologies in terms of RF power density, power switching efficiency, sensor robustness and sensitivity.
Soitec’s state-of-the-art (Al,Ga)N/GaN hetero-epitaxial layer structures are deposited crack-free on a (111) silicon or semi-insulating SiC substrates. Diameters up to 200mm are supported for silicon substrates and up to 150mm for SiC substrates.
Optimized buffer designs are available for RF and high-voltage applications that offer low leakage currents, high breakdown voltage, low dispersion and RF losses, with a consistently low wafer bow.
A variety of cap and barrier combinations can be supported for differentiation, including an in-situ SiN surface passivation resulting in superior device performance and reliability vs Si- and GaAs-based products.