Fully Depleted Silicon-On-Insulator (FD-SOI) enables transistors to operate in fully depleted mode, which presents many advantages compared to partially depleted mode (Partially-Depleted SOI, PD-SOI) or bulk technologies.
To achieve this, FD-SOI wafers need to be both very thin and extremely uniform for the top and BOx layers.
Soitec guarantees the final SOI layer’s uniformity to within just a few atomic layers.
The BOx functions like a real second gate and allows chip makers to easily tune the threshold voltage of the transistors.
FD-SOI is a low-power technology that allows operating voltages as low as 0.4V for applications in which energy consumption per operation is minimum.
FD-SOI surpasses bulk technologies in terms of performance with more than 50% faster operation, 18% less power consumption, and the ability to achieve frequencies very close to FinFET devices.
Due to its thin BOX, FD-SOI benefits from extensive back biasing capability to easily tune the power/performance tradeoff depending on the application.
This allows designing to create a single platform for multiple use cases.
FD-SOI allows unique analog performance thanks to its low variability characteristics, its body bias features, and its 2D device architecture, which present far less parasitic capacitances compared to 3D devices.
Studies show that FD-SOI provides better reliability than standard bulk process technologies with a 100x to 1000x improvement in soft error rates (SER).
This is especially significant to automotive and aerospace applications.
FD-SOI technology provides the best balance between digital performance, mixed-signal compatibility, power consumption and cost.
Soitec produces FD-SOI wafers for following technology nodes: 65, 28, 22, 12nm.
Soitec FD-SOI wafers characteristics are: