SOI FOR PROCESSOR & CONNECTIVITY SoCs

More efficient computing capabilities using SOI based SoC platforms

Our digital and connectivity system on chip (SoC) solutions address the need for more efficient, more connected and more reliable electronics for a wide range of products from IOT to cloud computing.

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INTEGRATED CIRCUITS (ICs) HAVE BECOME PERVASIVE AND CONNECTED

With the digitalization of the world, integrated circuits have become pervasive and connected.
They accompany us seamlessly, either through cloud computing or directly on our mobile devices, in every single action of our lives.

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THE WOLRD REQUIRES POWER EFFICIENCY

Electronics not only must deliver performance to ensure the required functionality, but also need to be more and more power efficient.
Users don’t want to re-charge their device on a daily basis.
On the server level, more efficient computing is needed as cloud computing grows to represent a larger proportion of the world’s electricity consumption.

10% of world electricity is consumed by cloud computing.

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MORE AND MORE INTEGRATED FUNCTIONS

Today’s ICs integrate more and more functions:

connectivity (wifi/Bluetooth, near Field communication)
computing (microprocessor unit, image signal processor, digital signal processor, etc.)
interfaces (USB, FireWire, Ethernet, receiver/transmitter,etc.)
analog (analog to digital converter, digital to analog converter, voltage regulator, power management, phase-locked loop)
memory (read only memory, random access memory, programmable ROM , flash memory)

OUR DIGITAL-SOI PRODUCTS: FROM IOT TO CLOUD COMPUTING

Soitec enables multiple SoC solutions from IOT to cloud computing and provides a range of solutions to meet different market needs.

FD-SOI for low power computing applications at best cost/performance tradeoff, high-reliability applications, and connectivity solutions.

PD-SOI and FinFET-SOI for high-performance computing.

FD-SOI

FD-SOI is the mainstream product addressing a wide range of power sensitive markets. It is used for following technology nodes: 65, 28, 22, 12nm.
Major foundries using FD-SOI are Samsung, GLOBALFOUNDRIES, and STMicroelectronics.

It is the product line with the thinnest top and buried oxide layers.

Typical wafer characteristics:

- Top layer thickness: 120Å
- Top layer uniformity: +/-5Å
- Buried oxide layer: 150Å -300Å
- Available in 300mm

PD-SOI

For years PD-SOI was Soitec’s mainstream product for microprocessors and gaming products.
Now it is used primarily in addressing cloud computing markets for technology nodes from 45nm to 22nm.

Typical wafer characteristics:

- Top layer thickness: 880
- Top layer uniformity: +/-25Å
- Buried oxide layer: 1450Å - 1900Å
- Available in 300mm

FinFET-SOI

FinFET-SOI addresses advanced technology nodes (typ. 14nm) using 3D FinFET devices for ultra-high-performance applications such as cloud computing.
The Buried oxide layer (BOX) represents a natural etch stop layer to implement easy and straightforward FinFET integration schemes.

Typical wafer characteristics:

- Top layer thickness: 425
- Top layer uniformity: +/-15Å
- Buried oxide layer: 1900Å
- Available in 300mm

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