Thanks to the Smart Cut process and donor wafer refresh capabilities, power device can be built directly on GaNoX. This avoids the extra step of growing a thick multi-micron buffer layer, as required when using GaN-on-silicon.
In addition, GaNoX’s superior crystal quality allows higher operating voltages, making it suitable for a wide spectrum of applications while offering an attractive price/performance ratio compared to SiC up to 1200V.
The semiconductor industry’s need for InP continues to increase. However, high pricing and the brittleness of these substrates have limited InP’s use. As a low-cost, 150mm alternative, Soitec has developed compound substrates with the crystalline properties of free-standing InP that also provide the robustness of GaAs or Ge.
InPoGaAs is a substrate of choice for fabricating multi-junction CPV solar cells, which have set a world record of 47% efficiency at the cell level. Soitec’s diverse portfolio also includes InPoGe substrates, which have a high indium content that provides resistance to radiation, making these wafers well suited for space-based solar applications.
InPoGaAs also is suitable for photonics applications such as PIN diodes. The active layer of InP is epi ready, allowing photonics structures to be built on these cost-effective and robust substrates.
In addition, InPoGaAs technology is fully compatible with 150mm wafers. These substrates represent the future generation of InP and provide a pathway to address applications such as 5G and other RF devices.
GaNoX substrates are suitable for applications including motor drivers, consumer electronics, adapters, e-mobility, power factor correction (PFC) stages, PC power, solar energy and lighting.