Products
Our products portfolio covers three main families:
• GaAs epiwafers
• GaN epiwafers
• Smart Cut™ substrates for electronic and optoelectronic applications
GaAs Epiwafers
As described in the following table, our GaAs volume production process is capable of manufacturing various types of III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P. We do supply customer specified as well as standard structures. With more than 20 years of experience in the domain, our experts can help you to fine tune your layer structure to fit your device requirements.
» GaAs Epiwafers product sheet
Our process control capability of critical parameters is evidenced from the examples of SPC charts below:
Control and Spec Limit Chart for Total Active Layer Thickness
Example of Control and Spec Limit Chart for Indium Composition
Control and Spec Limit Chart for Rs_Average
GaN Epiwafers
As described in the following table, we have available a full range of GaN HEMT structures on various substrates for high power RF and discrete DC applications.
Like for GaAs products, our experts can support customers to tailor the structures according to devices requirements.
» GaN Thin Epiwafers product sheet
Smart Cut™ substrates
In GaN electronic and Opto-electronic domains, it becomes obvious that bulk substrates cannot optimally respond to any applications requirement. Hence, thanks to the Smart Cut™ technology developped by Soitec and utilized in large volume for SOI substrates, we do offer engineered substrates specifically designed for compound semiconductors devices.