Markets
In the compound semiconductor domain, each of our customers has their own proprietary device designs. Our materials solutions are tailored with atomic layer precision to their specific design requirements. These include GaAs epi wafers solutions for:
• Pseudomorphic and Metamorphic High-electron mobility transistors (PHEMTs and MHEMTs)
• Heterojunction bipolar transistors (HBTs)
• Metal-semiconductor field effect transistors (MESFETs)
• Hall sensors
• Photo-imaging sensors
• and GaN epiwafers solutions on various substrates such as Silicon, Silicon Carbide or Engineered substrates for High power devices (HEMT).
Picogiga has a long history of successful partnerships with key customers in the commercial telecommunications, military and aerospace industries. They are based across North American, Japan/Asia-Pacific and Europe.
The primary, performance-driven applications in which Picogiga™ products are used include:
| Domain | Examples of end-user applications | Transistor types & materials solutions |
|---|---|---|
| Wireless/RF | 2.5/3G handsets and base stations; WLAN (WiFi & Bluetooth) | HEMT (GaAs & GaN), pHEMT, HFET (GaAs) HBT (InGaP), Specific substrates |
| Communications | DVB, Satellite, fiber optic switches & infrastructure, VSAT, CATV 40 Gbits/s optical networks | HEMT (GaAs, GaN), mHEMT (GaAs), HBT (GaAsSb) |
| Military | Radar, satellite communications, S&X radar, 40 Gbits/s optical networks Vision | HEMT (GaAs & GaN), mHEMT (GaAs) Qwip (GaAs), HBT (InGaP) |
| Automotive | Medium and short-distance radar (for back-up assistance and collision detection systems, for example); airbags; LEDs | HBT (GaAsSb and InGaP) |
| Optoelectronics | Detection systems, fiber optics, power amplifiers, LEDs, lasers | HEMT, mHEMT, HBT HBT (GaAsSb), GaN, Specific substrates |
| OEM | Metering | Hall sensors (GaAs) |
