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Wafer Diameter 150 mm
200 mm
300 mm

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Product Description - Top Silicon Thickness (70 to 100'000 nm):
- Top Silicon Doping type
- Top Silicon Resistivity (1 to 1000 Ohm.cm):
- Buried Oxide Thickness (145 to 3000 nm):
- Base Wafer Doping type:
- Base Silicon Resistivity (1 to 1000 Ohm.cm):
- Base Wafer Thickness (525 to 775 µm):
- Base Wafer Backside:
- All wafers have SEMI standards (100) crystal orientation.

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SOI Product Quality Prime only
Test / Monitor authorized

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Quantity needed
(Minimum order quantity is 25 wafers – 10 when stock available)

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Application Analog & Mixed signal
Power/Discrete
CMOS Logic
Solar
Photonics
RF Devices
M(O)EMS
Memories
Other, please specify:

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Comments /
Specific Requirements
(You can here specify which parameters are mandatory or if some are not so important; this will help to find the best product for your needs)

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