Breakthrough compound semiconductor substrates bring technology to new levels of performance for a wide range of applications from telecommunications and military to power management and lighting.
Soitec leverages proven experience to grow epitaxial layers on gallium arsenide (GaAs) and other compound semiconductor substrates.
These materials include binary or ternary compound semiconductor alloys epitaxially grown on substrates like indium phosphide (InP), gallium arsenide (GaAs), silicon carbide (SiC), silicon (Si), and engineered substrates, all of which are in demand for high-frequency electronic devices (for mobile telecommunications, infrastructure networks, satellite communications, fiber optic networks, and radar detection), power management, and optoelectronic devices (like LEDs).
Growth of these compound materials can also be used in combination with Soitec’s Smart Cut™ technology. This enables the creation of new high-performance and more cost-effective substrate solutions featuring high-quality, eptitaxially-grown active layers.
We offer III-V epiwafer manufacturing expertise in the following areas: