III-V products
GaAS epiwafers
For RF & microwave components
Features
Generic pHEMT (AlGaAs, AlAs, InGaAs)
Epistructure for E/D (Enhancement/Depletion) InGaP pHEMT
P-type doping capability for PiN-pHEMT technology
High-Low and High-Low-High MESFET
MHEMT and pMHEMT (38% to 70%)
Benefits
Epistructure
Epistructure customization for MESFET, HEMT, pHEMT, MHEMT, pMHEMT, diode
Low/High temperature MBE process
Phosphorus capability for InGaP layer
P-type doping capability
Manufacturing
Engineering service for better performance, better yields (1)
SPC controls (2)
Excellent uniformity ( < 2% wafer-to-wafer)
Characterization
Contactless resistivity, mobility & sheet carrier concentration
XRD, PL, Hall characterization
Large electrical device characterization (buffer isolation)
Device applications:
Switch
Power and low-noise amplifiers
Hall sensor
Optical modulator
System applications:
Wireless: cell phone (3)
Military-Defense: satellite, radar (4)
Automotive (5)
GaN thin Epiwafers
For discrete power devices, RF & microwave components
Features
GaN HEMT structure dedicated to very high power density applications from DC up to microwave
Low-noise application (Noise Figure: 0.75dB at 10GHz)
Excellent buffer isolation (typically > 600V with 1.8µm GaN buffer)
Benefits
Epistructure (1)
SP1: standard structure with a sheet resistivity: 420 Ohm.sq; mobility: 1500cm2/V/s
SP2: greater mobility (+30% compared with SP1)
SP3: greater sheet carrier density (+20% compared with SP1) (2)
SP4: less gate leakage current (10 times less than standard SP1)
PSP: Higher buffer breakdown voltage, better electron confinement
Substrate compatibility with
SiC substrate: 2”; 3” diameter
Silicon HR [111]: 2”; 3”; 100mm diameter, possible scalability to 150mm
Manufacturing
GaN buffer up to 3µm thick
High electrical isolation: iron-free process
Very low bow ( < 30µm)
Crack-free material, low dislocation density (typically 3E9cm-2)
Capability to dope N+ with Silicon doping up to 5E17cm-3
Device applications:
DC power devices: rectifier, switch…
Power and low-noise amplifiers
C, K, Ku, X and Q band amplifiers
System applications:
Wireless: WiMAX base station (3)
Military-Defense: satellite, radar (4)
Consumer: power supply for appliances and computers (5)
Automotive: power train (6)
