Soitec GaAs Epiwafer products
Our GaAs production facility is capable of manufacturing various types of III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P. We supply standard pHEMT structures as well as custom structures to meet customer specifications. With more than 20 years of experience, our experts can help you to fine tune your layer structure to fit your device requirements.
GaAs Epi product line
Features
- Generic pHEMT (GaAs, AlGaAs, InGaAs)
- E/D (Enhancement/Depletion) pHEMT
- High-Low and High-Low-High MESFET
- mHEMT (In concentration 38% to 70%)
Benefits
- Customization for MESFET, HEMT, pHEMT, mHEMT, diode
- High temperature MBE process
- Phosphorus capability for InGaP layer
Manufacturing
- Engineering service for better performance, better yields
- SPC control
Characterization
- Contactless resistivity, mobility & sheet carrier concentration
- Surfscan surface and defect control
- XRD, PL, Hall characterization
- Internal electrical characterization with large area devices (buffer isolation)
Device applications
- Switch
- Power and low-noise amplifiers
- Hall sensor
- Optical modulator
System applications
- Wireless: cell phone
- Military-Defense: satellite, radar
- Automotive