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Soitec Smart Power SOI™ for power and analog applications
Our Soitec Smart Power SOI products were developed to address a broad range of analog and power applications, handling breakdown voltages of up to 600V. We supply standard and customer-specific structures, with a wide range of thicknesses available for the top silicon and the buried oxide layers. Soitec’s experts draw upon more than two decades of experience to help you fine-tune your layer structure to fit your device requirements.
Our Soitec Smart Power SOI products are designed and manufactured using Soitec’s mature Smart Cut™ technology or, for thicker silicon films, Smart Cut technology supplemented with epitaxial growth.
Soitec products for power and analog applications
- 150 mm, 200 mm and 300 mm diameter
- 1 µm to 1.5 µm Smart Cut top silicon layer
- Smart Cut technology plus additional epi growth for thicker silicon film
- 0.145 μm to 3 μm buried oxide layer
Benefits
- Significant chip size reduction and much lower overall system costs
- Improved EMC
- Reduced standby current
- No latch-up effects
- Very high temperature operation (up to 200°C)
- 30% reduction in Ron of the driver stages
- Improved device characteristics