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Soitec Imager SOI™ for Back Side Illuminated Image Sensors (BSI IS)
Our Soitec Imager SOI product line was developed specifically to address the demands of the latest Back Side Illuminated Image Sensor (BSI IS) applications, delivering better sensitivity in low light and smaller pixel size. We supply both standard and customer-specific structures requiring over 1.5µm top silicon. Soitec’s experts draw upon more than two decades of experience to help you fine-tune your layer structure to fit your device requirements.
Our Soitec Imager SOI products are designed and manufactured using Soitec’s mature Smart Cut™ technology combined with epitaxial growth.
With Smart Cut technology, the SOI substrate’s buried oxide layer acts as a built-in etch stop; it also protects the active Si layer during the thinning process. The highly uniform thinning achieved results in a simpler, more robust process.
Soitec products for back side illuminated image sensors
- 200mm and 300 mm diameter
- For silicon films thicker than 1.5µm, additional epi growth
- 0.145µm to 0.5µm buried oxide layer
Benefits
- Faster learning and ramp-up
- Higher yields in volume production
- Lower total cost of ownership